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A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochralski GaAs at temperatures 2-300 K. The reversibility from the semiconducting to the semi-insulating state is made by slow or fast cooling, respectively, following a 5-h, 950°C heat treatment in an evacuated quartz ampoule. A donor level at Ec - 0.13 eV and two acceptor levels at Ev + 0.069 eV and Ev + 0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair VGa-GaAs is discussed.


Copyright © 1987, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 62.7, and may be found at



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