A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochralski GaAs at temperatures 2-300 K. The reversibility from the semiconducting to the semi-insulating state is made by slow or fast cooling, respectively, following a 5-h, 950°C heat treatment in an evacuated quartz ampoule. A donor level at Ec - 0.13 eV and two acceptor levels at Ev + 0.069 eV and Ev + 0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair VGa-GaAs is discussed.
Yu, P. W.,
Look, D. C.,
& Ford, W.
(1987). Photoluminescence in Electrically Reversible (Semiconducting To Semiinsulating) Bulk GaAs. Journal of Applied Physics, 62 (7), 2960-2964.