Advances in 1550-nm Driven THz, GaAs Photoconductive Switches
Document Type
Conference Proceeding
Publication Date
10-12-2017
Abstract
Ultrafast photoconductive switches were fabricated from GaAs embedded with ErAs nanoparticles and tested in two antenna types: a self-complementary square spiral, and a slot antenna designed for half-wave resonance at 567 GHz. These devices are designed for driving with 1550nm lasers. At least ∼46 μW of THz average power was generated from the spiral, and ∼5 μW from the resonant slot. This is the first demonstration of a 1550-nm-driven GaAs:ErAs THz source in a resonant antenna.
Repository Citation
Mingardi, A.,
Zhang, W.,
& Brown, E.
(2017). Advances in 1550-nm Driven THz, GaAs Photoconductive Switches. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz.
https://corescholar.libraries.wright.edu/physics/1083
DOI
10.1109/IRMMW-THz.2017.8067209
