THz Photoconductivity in GaAs: ER at 1550 nm, and Comparison with Cross-Gap Performance
Document Type
Conference Proceeding
Publication Date
8-15-2016
Abstract
This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance.
Repository Citation
Brown, E.,
Zhang, W.,
Feldman, A.,
Harvey, T.,
& Mirin, R.
(2016). THz Photoconductivity in GaAs: ER at 1550 nm, and Comparison with Cross-Gap Performance. Optics InfoBase Conference Papers.
https://corescholar.libraries.wright.edu/physics/1097
DOI
10.1364/LAOP.2016.LW2B.2
