THz Photoconductivity in GaAs: ER at 1550 nm, and Comparison with Cross-Gap Performance
This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance.
& Mirin, R.
(2016). THz Photoconductivity in GaAs: ER at 1550 nm, and Comparison with Cross-Gap Performance. Optics InfoBase Conference Papers.