Document Type
Article
Publication Date
5-1-2020
Identifier/URL
40296025 (Pure); 85092027492 (QABO)
Abstract
Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 ○C, 810 ○C, 860 ○C, and 900 ○C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room tem- perature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 ○C and 810 ○C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 ○C.
Repository Citation
Cornuelle, E. M.,
Growden, T. A.,
Storm, D. F.,
Brown, E. R.,
Zhang, W.,
Downey, B. P.,
Gokhale, V.,
Ruppalt, L. B.,
Champlain, J. G.,
Peri, P.,
McCartney, M. R.,
Smith, D. J.,
Meyer, D. J.,
& Berger, P. R.
(2020). Effects of Growth Temperature on Electrical Properties of GaN/AlN Based Resonant Tunneling Diodes With Peak Current Density up to 1.01 MA/cm2. AIP Advances, 10 (5), 55307.
https://corescholar.libraries.wright.edu/physics/1186
DOI
10.1063/5.0005062
Comments
© 2020 Author(s).