AC Conductivity Parameters of Graphene Derived From THz Etalon Transmittance
Document Type
Article
Publication Date
11-21-2014
Identifier/URL
43027948 (Pure)
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Abstract
THz frequency-domain transmittance measurements were carried out on chemical-vapor-deposited (CVD) graphene films transferred to high-resistivity silicon substrates, and packaged as back-gated graphene field effect transistors (G-FETs). The graphene AC conductivity σ(ω), both real and imaginary parts, is determined between 0.2 and 1.2 THz from the transmittance using the transmission matrix method and curve-fitting techniques. Critical parameters such as the charge-impurity scattering width and chemical potential are calculated. It is found that not only the sheet charge density but also the scattering parameter can be modified by the back-gate voltage.
Repository Citation
Zhang, W.,
Pham, P. H.,
Brown, E. R.,
& Burke, P. J.
(2014). AC Conductivity Parameters of Graphene Derived From THz Etalon Transmittance. Nanoscale, 6 (22), 13895-13899.
https://corescholar.libraries.wright.edu/physics/1190
DOI
10.1039/c4nr03222e
