First Demonstration of Photomixing at 1550 nm in ErAs:GaAs

Authors

J. R. Middendorf, Wright State University
Elliott R. Brown, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

11-13-2014

Identifier/URL

40267992 (Pure); 84911965403 (QABO)

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Abstract

We have extended the discovery of ultrafast extrinsic photoconductivity in ErA:GaAs to the 1550 nm-driven continuous-wave (CW) photomixer. The photocurrent in the photomixer has been measured as a function of 1550 nm laser power and bias voltage. Then the first ever 1550 nm ErAs:GaAs photomixing transceiver was setup and THz power was successfully measured. The work done here represents the first ever CW THz generation in ErAs:GaAs based on extrinsic photoconductivity.

Repository Citation

Middendorf, J. R., & Brown, E. R. (2014). First Demonstration of Photomixing at 1550 nm in ErAs:GaAs. 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
https://corescholar.libraries.wright.edu/physics/1194

DOI

10.1109/IRMMW-THz.2014.6956156