Document Type
Article
Publication Date
4-1-2014
Identifier/URL
43030722 (Pure)
Abstract
This Letter presents studies on low-field electrical conduction in the range of 4-300 K for an ultrafast material, i.e., InGaAs:ErAs grown by molecular beam epitaxy. The unique properties include nano-scale ErAs crystallites in the host semiconductor InGaAs, a deep Fermi level and picosecond ultrafast photocarrier recombination. As the temperature drops, the conduction mechanisms are in the sequence of: thermal activation, nearest-neighbor hopping, and variable-range hopping. In the low-temperature limit, finite-con-ductivity metallic behavior, not insulating, was observed. This unusual conduction behavior, related to the nanometer-scale ErAs crystallite islands, is explained with the Abrahams scaling theory. Current vs. temperature for (A) InGaAs:ErAs - the ultrafast nanocomposite; and (C) an undoped InGaAs.
Repository Citation
Middendorf, J. R.,
Cetnar, J. S.,
Owsley, J.,
& Brown, E. R.
(2014). Saturated Low-Temperature Conductivity in Ultrafast Semiconductor Nanocomposites. Physica Status Solidi - Rapid Research Letters, 8 (4), 367-370.
https://corescholar.libraries.wright.edu/physics/1200
DOI
10.1002/pssr.201308326
Comments
© Author(s).