THz Generation Using Extrinsic Photoconductivity at 1550 nm
Document Type
Article
Publication Date
7-16-2012
Identifier/URL
40206137 (Pure); 84864133432 (QABO)
Abstract
1550-nm pulses from a fiber-mode-locked laser are used to drive an ErAs:GaAs photoconductive switch, resulting in easily measured THz radiation with average broadband (~0.1 to 1.0 THz) power of ≈0.1 mW. The new THz switching mechanism is attributed to fast extrinsic photoconductivity that generates photocarriers (probably electrons) from the ErAs nanoparticles embedded in the material with a lifetime of ~0.45 ps (354 GHz bandwidth). This is the first known demonstration of useful THz power generation by extrinsic photoconductivity.
Repository Citation
Rouhi, N.,
Capdevila, S.,
Jain, D.,
Zand, K.,
Wang, Y. Y.,
Brown, E. R.,
Jofre, L.,
& Burke, P.
(2012). THz Generation Using Extrinsic Photoconductivity at 1550 nm. Optics Express, 20 (15), 16504-16509.
https://corescholar.libraries.wright.edu/physics/1217
DOI
10.1364/OE.20.016504
