A New Approach to On-Chip Probing in the MM-Wave to THz Range
Document Type
Article
Publication Date
1-1-2012
Identifier/URL
42972672 (Pure)
Abstract
One of the bigger obstacles in the development of THz devices and integrated circuits is their electrical characterization in the upper-millimeter to terahertz range above 100 GHz. Today's technology is mainly based on metal-to-metal, dc-coupled contact probes. This technology is, however, expensive and fragile, and is difficult to scale to higher frequencies. This paper concerns contact-free probes that are (ac) coupled to the device or circuit-under-test by the polarization current rather than the conduction current. Numerical simulations are carried out to 1.0 THz and the probe coupling is found to be around −26 dB, with a bandwidth of at least 500 GHz.
Repository Citation
Bennett, D.,
Taylor, Z.,
Tewari, P.,
Sung, S.,
MacCabi, A.,
Singh, R.,
Culjat, M.,
Grundfest, W.,
Hubschman, J. P.,
& Brown, E. R.
(2012). A New Approach to On-Chip Probing in the MM-Wave to THz Range. 012 IEEE National Aerospace and Electronics Conference (NAECON), 28-30.
https://corescholar.libraries.wright.edu/physics/1218
DOI
10.1109/NAECON.2012.6531021
