Critical Comparison of GaAs and InGaAs THz Photoconductors
Document Type
Article
Publication Date
1-1-2012
Identifier/URL
40277925 (Pure); 84860354254 (QABO)
Find this in a Library
Abstract
Ultrafast photoconductors have been an enabling device technology in the THz field during the past decade. And their implementation is now worldwide in time- and frequency-domains systems of various types. While the technological push is towards InGaAs or similar photoconductors operating at 1550 nm, the GaAs-based devices operating around 800 nm still provide superior performance and robustness in most cases. This paper contrasts the GaAs and 1550-nm devices in terms of materials design and solid-state metrics such as electron-hole lifetime, carrier mobility, and resistivity. It also summarizes the main materials developed over the past 20 years.
Repository Citation
Brown, E. R.,
Zhang, W.,
Mendoza, E. A.,
Kuznetsova, Y.,
Brueck, S. R.,
Rahman, M.,
& Norton, M. L.
(2012). Critical Comparison of GaAs and InGaAs THz Photoconductors. Terahertz Technology and Applications V, 8261, 826102.
https://corescholar.libraries.wright.edu/physics/1221
DOI
10.1117/12.914028
