Extrinsic Photoconductivity at 1550 nm and 1030 nm for THz Generation
Document Type
Article
Publication Date
1-1-2012
Identifier/URL
40295851 (Pure); 84873414940 (QABO)
Abstract
Pulses from a 1550 and 1030 nm fiber-mode-locked laser are used to drive an ErAs:GaAs photoconductive switch, resulting in extrinsic photoconductivity and useful levels of THz (~100 μW) with the 1550-nm laser drive, but not with the 1030-nm laser. This finding supports the recent discovery that extrinsic photoconductivity is a useful mechanism in ErAs:GaAs, but the THz generation is sensitive to the specific laser drive wavelength.
Repository Citation
Martin, M.,
& Brown, E. R.
(2012). Extrinsic Photoconductivity at 1550 nm and 1030 nm for THz Generation. 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.
https://corescholar.libraries.wright.edu/physics/1223
DOI
10.1109/IRMMW-THz.2012.6380210
