A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS
Document Type
Article
Publication Date
11-1-2011
Identifier/URL
43028334 (Pure)
Abstract
A 2 × 2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna (255×250 μ m2 ) is fabricated in a 130-nm logic CMOS process. The series resistance of diode is minimized using poly-gate separation (PGS), and exhibits a cut-off frequency of 2 THz. Each detector unit can detect an incident carrier with 100-Hz ∼ 2-MHz amplitude modulation. At 1-MHz modulation frequency, the estimated voltage responsivity and noise equivalent power (NEP) of the detector unit are 250 V/W and 33 pW/Hz1/2 , respectively. An integrated low-noise amplifier further boosts the responsivity to 80 kV/W. At supply voltage of 1.2 V, the entire chip consumes 1.6 mW. The array occupies 1.5×0.8 mm2. A set of millimeter-wave images with a signal-noise ratio of 48 dB is formed using the detector. These suggest potential utility of Schottky diode detectors fabricated in CMOS for millimeter wave and sub-millimeter wave imaging.
Repository Citation
Cetnar, J. S.,
Middendorf, J. R.,
& Brown, E. R.
(2011). A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS. IEEE Journal of Solid-State Circuits, 46 (11), 2602-2612.
https://corescholar.libraries.wright.edu/physics/1226
DOI
10.1109/JSSC.2011.2165234
