Electron-Beam Modification of GaAs Surface-Potential - Measurement of Richardson Constant

Authors

S. M. Lindsay
Joseph W. Hemsky, Wright State University - Main CampusFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

8-1-1993

Abstract

The surface potential of GaAs is strongly modified in the presence of a high‐energy electron beam due to the creation of electron‐hole pairs in the depletion region and the subsequent drift of the holes to the surface where they neutralize surface states. This effect is modeled in terms of a parameter K=A∗T²/I_b(dE/dz)η, where I_b is the beam current density, A∗ is the effective Richardson constant, dE/dz is the beam energy loss per unit length, and η⁻¹ is the average energy required to create an electron‐hole pair. For the sample studied here, an 0.25‐μm layer with n≂3×10¹⁷ cm⁻³, we obtain a value K≂(7.5±0.8)×10⁴ cm at T=296 K and I_b=0.33 μA/cm², which gives A∗≂0.44 A/cm² K². Although this value of A∗ is much lower than the theoretical estimate of 8 A/cm² K², it is in good agreement with other recent results.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 74.3, and may be found at http://jap.aip.org/resource/1/japiau/v74/i3/p1890_s1

Repository Citation

Lindsay, S. M., Hemsky, J. W., & Look, D. C. (1993). Electron-Beam Modification of GaAs Surface-Potential - Measurement of Richardson Constant. Journal of Applied Physics, 74 (3), 1890-1893.
https://corescholar.libraries.wright.edu/physics/123

DOI

10.1063/1.354798