280-GHz Schottky Diode Detector in 130-NM Digital CMOS
Document Type
Article
Publication Date
1-1-2010
Identifier/URL
43003782 (Pure)
Abstract
A 2×2 array of Schottky-barrier diode detectors with an on-chip patch antenna and a preamplifier is fabricated in a 130-nm logic CMOS process. Each detector cell can detect the 25-kHz modulated 280-GHz radiation signal with a measured responsivity and noise equivalent power (NEP) of 21kV/W and 360pW/ √Hz, respectively. At 4-MHz modulation frequency, NEP should be about 40pW/ √Hz. At supply voltage of 1.2V, the detector consumes 1.6mW. By utilizing the detector, a millimeter-wave image is constructed, demonstrating its potential application in millimeter-wave and THz imaging.
Repository Citation
Bennett, D. B.,
Taylor, Z. D.,
Bajwa, N.,
Tewari, P.,
MacCabi, A.,
Sung, S.,
Singh, R. S.,
Culjat, M. O.,
Grundfest, W. S.,
& Brown, E. R.
(2010). 280-GHz Schottky Diode Detector in 130-NM Digital CMOS. IEEE Custom Integrated Circuits Conference 2010.
https://corescholar.libraries.wright.edu/physics/1239
DOI
10.1109/CICC.2010.5617387
