Toward a 1550 nm InGaAs Photoconductive Switch for Terahertz Generation
Document Type
Article
Publication Date
10-15-2009
Identifier/URL
40315270 (Pure); 19838228 (PubMed); 70450214686 (QABO)
Abstract
We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of ∼12 μW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.
Repository Citation
Singh, R. S.,
Taylor, Z. D.,
Tewari, P.,
Bennett, D.,
Culjat, M. O.,
Lee, H.,
Brown, E. R.,
& Grundfest, W. S.
(2009). Toward a 1550 nm InGaAs Photoconductive Switch for Terahertz Generation. Optics Letters, 34 (20), 3068-3070.
https://corescholar.libraries.wright.edu/physics/1248
DOI
10.1364/OL.34.003068
