Electrical Transport in a Semimetal-Semiconductor Nanocomposite
Document Type
Article
Publication Date
5-1-2009
Identifier/URL
40273482 (Pure); 67249092429 (QABO)
Abstract
Measurements are presented on the low-field electrical conductivity and moderate-field current–voltage characteristics in a nanocomposite structure of ErAs particles in an In0.53Ga0.47As host with Be compensation. The electrical conductivity displays strong temperature dependence with two types of transport mechanisms. At ∼205 K and above, the low-field conductivity appears to be dominated by free electrons in In0.53Ga0.47As. Between 55 and 205 K, the conductivity is well explained by variable-range hopping, σ=Aexp(−B/T1/4), via Mott's law. The transport displays a soft breakdown effect at moderate bias fields that grows in threshold field with decreasing temperature. This is attributed to impact ionization of the Be dopants.
Repository Citation
Brown, E. R.,
Taylor, Z. D.,
Tewari, P.,
Singh, R. S.,
Culjat, M. O.,
Bennett, D. B.,
& Grundfest, W. S.
(2009). Electrical Transport in a Semimetal-Semiconductor Nanocomposite. IEEE Transactions on Nanotechnology, 8 (3), 402-407.
https://corescholar.libraries.wright.edu/physics/1249
DOI
10.1109/TNANO.2008.2011764
