Design & Optimization of an I-Rtd Hybrid THz Oscillator Based Upon In1−xGaxAs/GaSbyAs1−y Heterostructure Systems
Document Type
Article
Publication Date
12-1-2007
Identifier/URL
40289224 (Pure); 35648945323 (QABO)
Abstract
An In1−xGaxAs/GaSbyAs1−y hetero-system with staggered band-lineups as solid-state platform for design of an interband resonant double-barrier tunneling diode (I-RTD) based optically-pulsed (OT) hybrid device for generating THz oscillations is theoretically investigated. It is demonstrated that this optical I-RTD hybrid is compatible with the robust state-of-art 1.55 micron laser technology Multi-band wave equations in the framework of six-band Kane's model are applied for understanding the carrier dynamics when strain-induced effects are present. Simulation results for practical circuit implementations clearly show the superiority of this new oscillator concept.
Repository Citation
Singh, R. S.,
Culjat, M. O.,
Grundfest, W. S.,
Brown, E. R.,
& White, S. N.
(2007). Design & Optimization of an I-Rtd Hybrid THz Oscillator Based Upon In1−xGaxAs/GaSbyAs1−y Heterostructure Systems. International Journal of High Speed Electronics and Systems, 17 (4), 761-775.
https://corescholar.libraries.wright.edu/physics/1276
DOI
10.1142/S0129156407004965
