Advances in Schottky Rectifier Performance
Document Type
Article
Publication Date
6-1-2007
Identifier/URL
40258219 (Pure); 34249821043 (QABO)
Abstract
In conclusion, heteroepitaxial technology has delivered a new device building block for the microwave and millimeter-wave toolbox - a single-crystal Schottky barrier diode made from a lattice matched combination of a semimetal (ErAs) and a semiconductor (InAlGaAs). This article has demonstrated how sensitive such a Schottky diode can be as a room-temperature zero-bias rectifier up to W band and addressed the fundamental device and impedance matching issues when coupled to a planar antenna in a quasi-optical package. As might be expected, the new Schottky diodes also display a very low degree of 1/f noise when used in applications that require bias or large signals, such as frequency mixers and multipliers (Young et al., 2006).
Repository Citation
Saddik, G. N.,
Singh, R. S.,
& Brown, E. R.
(2007). Advances in Schottky Rectifier Performance. IEEE Microwave Magazine, 8 (3), 54-59.
https://corescholar.libraries.wright.edu/physics/1280
DOI
10.1109/MMW.2007.365059
