Tunneling Through MnAs Particles at a GaAs P+ N+ Junction
Document Type
Article
Publication Date
5-1-2006
Identifier/URL
43001446 (Pure)
Abstract
In this article we examine tunneling through MnAs particles at a GaAs p+ n+ junction. We grew the device structures by molecular beam epitaxy on semi-insulating GaAs (001) substrates, with the n+ (5× 1018 cm-3 Si) and p+ (2× 1019 cm-3 Be) layers grown at 580 °C. At the p+ n+ junction, we grew a 30 nm layer of random alloy Ga1-x Mnx As at 250 °C. In situ annealing the Ga1-x Mnx As transforms to thermodynamically stable MnAs particles in a GaAs matrix. Magnetization measurements show that the MnAs particles are superparamagnetic with a distribution of blocking temperatures that depends on the annealing protocol. The MnAs particles at the interface are imaged using atomic force microscopy of selectively etched, MnAs-topped nanocolumns. Current-voltage (IV) scans show that the presence of particles increases the forward bias current density. Low-temperature current-voltage (IV) scans confirm an increase in the forward bias current density due to tunneling through MnAs particles.
Repository Citation
Taylor, Z. D.,
Brown, E. R.,
Bjarnason, J. E.,
Hanson, M. P.,
& Gossard, A. C.
(2006). Tunneling Through MnAs Particles at a GaAs P+ N+ Junction. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (3), 1639-1643.
https://corescholar.libraries.wright.edu/physics/1306
DOI
10.1116/1.2190680
