ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy

Authors

Jeramy D. Zimmerman, University of California
Arthur C. Gossard, University of California
Adam C. Young, University of California
Merritt P. Miller, University of California
Elliott R. Brown, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

4-1-2006

Identifier/URL

43030489 (Pure)

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Abstract

The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.

Repository Citation

Zimmerman, J. D., Gossard, A. C., Young, A. C., Miller, M. P., & Brown, E. R. (2006). ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy. Transactions of the Indian Institute of Metals, 59 (2), 167-175.
https://corescholar.libraries.wright.edu/physics/1307