Effects of in Profile on Material and Device Properties of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors

Authors

David C. Look, Wright State University - Main CampusFollow
B. Jogai
R. Kaspi
J. L. EbelFollow
K. R. EvansFollow
R. L. JonesFollow
K. NakanoFollow
R. E. SherriffFollow
C. E. Stutz
G. C. DeSalvoFollow
C. Ito

Document Type

Article

Publication Date

1-1-1996

Abstract

The molecular‐beam‐epitaxial growth of In_xGa_1−xAs on GaAs or Al_yGa_1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of In_xGa_1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal ‘‘square’’ In profile. We find that the performance of Al_yGa_1−yAs/In_xGa_1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone.

Comments

Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 79.1, and may be found at http://jap.aip.org/resource/1/japiau/v79/i1/p540_s1

Repository Citation

Look, D. C., Jogai, B., Kaspi, R., Ebel, J. L., Evans, K. R., Jones, R. L., Nakano, K., Sherriff, R. E., Stutz, C. E., DeSalvo, G. C., & Ito, C. (1996). Effects of in Profile on Material and Device Properties of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors. Journal of Applied Physics, 79 (1), 540-544.
https://corescholar.libraries.wright.edu/physics/131

DOI

10.1063/1.360862