High-Sensitivity, Quasi-Optically-Coupled Semimetal-Semiconductor Detectors at 104 GHz
Document Type
Article
Publication Date
1-1-2006
Identifier/URL
40193999 (Pure); 33747638078 (QABO)
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Abstract
We report experimental results for the optical responsivity and noise-equivalent power (NEP) of quasi-optically coupled, room-temperature ErAs-InGaAlAs rectifier diodes. Four-micron-diameter diodes were flip-chip coupled to self-complementary log-periodic and square-spiral antennas, and characterized with a 104-GHz Gunn diode oscillator coupled to the rectifiers through variable attenuators, a feedhorn, an aspherical polymeric lens, and a Si hyperhemisphere. The log-periodic mounted device displayed a responsivity and specific NEP' of 0.9x103 V/W and 1.2x10-12 W/Hz1/2, respectively. The square-spiral mounted device displayed a responsivity and NEP' of 1.2x103 V/W and 2.0x10-12 W/Hz 1/2, respectively. All values were measured at a post-detection center frequency of 33 Hz.
Repository Citation
Brown, E. R.,
Kazemi, H.,
Young, A. C.,
Zimmerman, J. D.,
Wilkinson, T. L.,
Bjarnason, J. E.,
Hacker, J. B.,
& Gossard, A. C.
(2006). High-Sensitivity, Quasi-Optically-Coupled Semimetal-Semiconductor Detectors at 104 GHz. Terahertz for Military and Security Applications IV, 6212, 62120S.
https://corescholar.libraries.wright.edu/physics/1313
DOI
10.1117/12.666473
