State-of-the-Art in 1.55 νm Ultrafast InGaAs Photoconductors, and the Use of Signal-Processing Techniques To Extract the Photocarrier Lifetime
Document Type
Article
Publication Date
7-1-2005
Identifier/URL
40284639 (Pure); 21044456608 (QABO)
Abstract
A summary of ultrafast In0.53Ga0.47As photoconductors at λ = 1.55 µm is provided, with emphasis placed on recent ion-implanted and ErAs-nanoparticulate materials that have displayed response times <1 ps. Signal-processing techniques are then developed to deconvolve the photocarrier lifetime from pump–probe photo-transmission data. These techniques are formulated in a way that allows the estimation of photocarrier lifetime values less than the pump–probe laser pulse width, and are applied to the fastest ErAs:In0.53Ga0.47As material measured to date with a photocarrier lifetime of ≈0.3 ps.
Repository Citation
Brown, E. R.,
Driscoll, D. C.,
& Gossard, A. C.
(2005). State-of-the-Art in 1.55 νm Ultrafast InGaAs Photoconductors, and the Use of Signal-Processing Techniques To Extract the Photocarrier Lifetime. Semiconductor Science and Technology, 20 (7), S199-S204.
https://corescholar.libraries.wright.edu/physics/1319
DOI
10.1088/0268-1242/20/7/009
