Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles

Authors

D. C. Driscoll, University of California
M. P. Hanson, University of California
A. C. Gossard, University of California
Elliott R. Brown, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

1-31-2005

Identifier/URL

43034558 (Pure)

Abstract

We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ≤0.3 ps were achieved in optimized structures.

Repository Citation

Driscoll, D. C., Hanson, M. P., Gossard, A. C., & Brown, E. R. (2005). Ultrafast Photoresponse at 1.55 μm in InGaAs With Embedded Semimetallic ErAs Nanoparticles. Applied Physics Letters, 86 (5), 51908, 1-3.
https://corescholar.libraries.wright.edu/physics/1323

DOI

10.1063/1.1852092