First MMW Characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky Diode (S 3) Detectors for Passive Millimeter-Wave and Infrared Imaging
Document Type
Conference Proceeding
Publication Date
1-1-2005
Identifier/URL
40255583 (Pure); 26844467303 (QABO)
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Abstract
We present the first mm-wave characterization of Semimetal Semiconductor Schottky (S3) diodes for direct detector applications from 94 GHz to 30 THz. The S3 devices use molecular-beam epitaxy growth of binary compounds that are closely lattice-matched and crystallographically perfect across the heterointerface to reduce 1/f and burst noise while maintaining ultra-high-frequency performance. The S3 diodes are fabricated from an InAlGaAs/InP based material system with both the Schottky layer and contact layer having n and n+ doping levels. The semimetal Schottky contact is ErAs which is grown in-situ during the MBE growth. By varying the InAlAs percentage content in the epitaxial layer structure, the diode dc I-V characteristics and its zero bias responsivity are optimized. Diode s-parameter data from dc-100 GHz is used to determine the diode responsivity as a function of frequency and diode capacitance and resistance. These measurements then allow the device intrinsic and extrinsic equivalent-circuit elements to be optimized for direct detection from 94 GHz to ~30 THz.
Repository Citation
Kazemi, H.,
Zimmerman, J. D.,
Brown, E. R.,
Gossard, A. C.,
Boreman, G. D.,
Hacker, J. B.,
Lail, B.,
& Middleton, C.
(2005). First MMW Characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky Diode (S 3) Detectors for Passive Millimeter-Wave and Infrared Imaging. Proceedings of SPIE - The International Society for Optical Engineering, 5789, 80-83.
https://corescholar.libraries.wright.edu/physics/1326
DOI
10.1117/12.604118
