Semimetal-Semiconductor Junctions for Low Noise Zero-Bias Rectifiers
Document Type
Article
Publication Date
1-1-2005
Identifier/URL
40189650 (Pure); 33749250971 (QABO)
Abstract
ErAs and InAlGaAs heterojunctions promise to act as low noise Schottky diode. In this paper, we present responsivity measurements and 2–8 GHz tangential sensitivity measurements on a room- temperature zero-bias rectifier intended for use in THz imaging arrays. This novel interface promises to allow for a room-temperature zero-bias rectifier that significantly simplifies detector design, mitigates current induced flicker and burst noise, and eliminates bias circuitry and related noise, potentially leading to a square-law detector with a noise floor of ~10−12 W/Hz1/2. The ability to tune barrier height, responsivity, capacitance and differential resistance is also investigated.
Repository Citation
Young, A. C.,
Zimmerman, J. D.,
Brown, E. R.,
& Gossard, A. C.
(2005). Semimetal-Semiconductor Junctions for Low Noise Zero-Bias Rectifiers. 2005 IEEE MTT-S International Microwave Symposium Digest, 447-450.
https://corescholar.libraries.wright.edu/physics/1329
DOI
10.1109/MWSYM.2005.1516625
