On Hall Scattering Factors for Holes in GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
C. E. Stutz
J. R. Sizelove
K. R. EvansFollow

Document Type

Article

Publication Date

8-1-1996

Abstract

Hall scattering factors for electrons and holes in molecular beam epitaxial GaAs layers have been determined by comparing carrier concentrations measured by the Hall effect with those measured by the electrochemical capacitance–voltage technique. The conclusion is that both the electron and hole scattering factors are near unity for n ranging from 2×10¹⁶ to 7×10¹⁷ cm⁻³, and p ranging from 5×10¹⁶ to 4×10¹⁹ cm⁻³. This conclusion is consistent with the present theory for electrons, but not with that for holes.

Comments

Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 80.3, and may be found at http://jap.aip.org/resource/1/japiau/v80/i3/p1913_s1

Repository Citation

Look, D. C., Stutz, C. E., Sizelove, J. R., & Evans, K. R. (1996). On Hall Scattering Factors for Holes in GaAs. Journal of Applied Physics, 80 (3), 1913-1915.
https://corescholar.libraries.wright.edu/physics/133

DOI

10.1063/1.363007