Tunable All Epitaxial Semimetal-Semiconductor Schottky Diode System: ErAs on InAIGaAs
Document Type
Article
Publication Date
9-1-2005
Identifier/URL
40317802 (Pure); 31144434284 (QABO)
Abstract
We report the growth, fabrication, and electrical properties of a fully epitaxial semimetal-semiconductor Schottky diode materials system: ErAs on InAlGaAs. The coherent, thermodynamically stable, lattice-matched interface eliminates oxide and interfacial third phases, making the Schottky barrier height and associated electrical parameters dependent on the fundamental molecular bonding (e.g., interface dipoles) rather than unintentional extrinsic effects. ErAs:InAlGaAs diodes thus have highly tunable properties; by adjusting composition, doping, and interface type, the Schottky barrier height is tunable from ∼ 100 meV to ∼ 620 meV , short circuit responsivity is tunable from 0.5 to 19 A ∕ W , differential resistance is tunable from 10 3 to 10 10 Ω μ m 2 , and capacitance is tunable from 0.4 to 2 fF ∕ μ m 2 . Rectification of a rf source has been demonstrated up to 20 GHz . ErAs:InAlGaAs is thus a very promising materials system for design of an upper mm-wave, zero-bias, square-law detector with a significantly reduced noise floor.
Repository Citation
Zimmerman, J. D.,
Brown, E. R.,
& Gossard, A. C.
(2005). Tunable All Epitaxial Semimetal-Semiconductor Schottky Diode System: ErAs on InAIGaAs. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (5), 1929-1935.
https://corescholar.libraries.wright.edu/physics/1331
DOI
10.1116/1.2013312
