ErAs:GaAs Photomixer With Two-Decade Tunability and 12 μW Peak Output Power

Document Type

Article

Publication Date

11-1-2004

Identifier/URL

40226643 (Pure); 10044234165 (QABO)

Abstract

This letter reports the fabrication and demonstration of an ErAs:GaAs interdigitated photomixer as a tunable THz source ranging from ∼20GHzto∼2THz, with 12μW maximum power typically around ∼90GHz. Each photomixer is coupled to a composite dipole-spiral planar antenna that emits a Gaussian-type beam into free space. The beam switches from dipole to spiral antenna behavior as the frequency increases. A distributed Bragg reflector is embedded in the device beneath the photomixer to increase its external quantum efficiency. The photomixer has a 900Å thick silicon nitride coating which serves as an antireflection and passivation layer, and also improves the reliability and heat tolerance of the device.

DOI

10.1063/1.1813635

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