Picosecond Photocarrier-Lifetime in ErAs:InGaAs at 1.55 μm
Document Type
Article
Publication Date
11-10-2003
Identifier/URL
40260823 (Pure); 0344083486 (QABO)
Abstract
This letter reports the measurement of photocarrier lifetime in ErAs:InGaAs epitaxial material grown on InP substrates. The measurement technique is ultrafast time-resolved phototransmission using a 1.55 μm mode-locked erbium-doped fiber laser. A lifetime of 3.56 ps is found in a sample containing an InAlAs smoothing layer, compared to 0.96 ps in a sample without any InAlAs. The difference is explained using a model of ambipolar diffusion of photocarriers.
Repository Citation
Sukhotin, M.,
Brown, E. R.,
Driscoll, D.,
Hanson, M.,
& Gossard, A. C.
(2003). Picosecond Photocarrier-Lifetime in ErAs:InGaAs at 1.55 μm. Applied Physics Letters, 83 (19), 3921-3923.
https://corescholar.libraries.wright.edu/physics/1344
DOI
10.1063/1.1622121
