Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs
Document Type
Article
Publication Date
1-20-1997
Identifier/URL
43035403 (Pure)
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Abstract
Photocarrier relaxation times τr in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured τr values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 °C and annealed at temperatures below 580 °C. We report the results of a systematic investigation of the dependence of τr on growth temperatures between 180 and 260 °C and anneal temperatures between 480 and 620 °C.
Repository Citation
Mclntosh, K. A.,
Nichols, K. B.,
Verghese, S.,
& Brown, E. R.
(1997). Investigation of Ultrashort Photocarrier Relaxation Times in Low-Temperature-Grown GaAs. Applied Physics Letters, 70 (3), 354-356.
https://corescholar.libraries.wright.edu/physics/1378
DOI
10.1063/1.118412
