III-V Quantum-Well Structures for High-Speed Electronics
Document Type
Article
Publication Date
1-1-1997
Identifier/URL
43038023 (Pure)
Abstract
Since the initial observation of strong intersubband absorption in multiple-quantum-well (MQW) structures (1), these structures have been used as the basis for several different types of midinfrared detectors, emitters, and modulators. One of the first successful detector designs used heavily doped n-type GaAs quantum wells and relatively thick AlxGa1 -xAs barriers with the well thickness and barrier A1 fraction tuned so that only one bound state existed in each quantum well (2).
Repository Citation
Brown, E. R.,
& McIntosh, K. A.
(1997). III-V Quantum-Well Structures for High-Speed Electronics. Thin Films, 23, 173-216.
https://corescholar.libraries.wright.edu/physics/1379
DOI
10.1016/S1079-4050(06)80015-3
