Effect of Ammonia Flow Rate on Impurity incorporation and Material Properties of Si-Doped GaN Epitaxial Films Grown by Reactive Molecular Beam Epitaxy

Authors

Wook Kim
A. E. Botchkarev
H. Morkoç
Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow
David J. Smith

Document Type

Article

Publication Date

12-1-1998

Abstract

Effect of ammonia flow rate on the impurity incorporation and material properties of Si-doped GaN films grown by reactive molecular beam epitaxy (RMBE) process is discussed. It appears that the ammonia flow rate has a marginal effect on the incorporation of impurities into the Si-doped GaN films except there was a little decrease in O and Si with increasing ammonia flow rate when the Si concentration in the film is higher than 10¹⁸ cm⁻³. Electron Hall mobility of Si-doped GaN films grown by RMBE varies with ammonia flow rate used during film growth. From deep level transient spectroscopy (DLTS) measurements for Schottky diodes grown with different ammonia flow rates, one deep trap (C1) particular to the RMBE films was found. The concentration of C1 trap was found to be the lowest in the sample grown with the condition leading to the highest electron Hall mobility within the scope of this experiment. In addition to the DLTS result, other characterization techniques used (x-ray diffraction, cross-sectional transmission electron microscopy, and low-temperature photoluminescence) also consistently show that the RMBE process requires certain value of ammonia flow rate (or V/III ratio if the Ga flux is fixed) to produce Si-doped GaN films with high quality.

Comments

Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 84.12, and may be found at http://jap.aip.org/resource/1/japiau/v84/i12/p6680_s1

Repository Citation

Kim, W., Botchkarev, A. E., Morkoç, H., Fang, Z., Look, D. C., & Smith, D. J. (1998). Effect of Ammonia Flow Rate on Impurity incorporation and Material Properties of Si-Doped GaN Epitaxial Films Grown by Reactive Molecular Beam Epitaxy. Journal of Applied Physics, 84 (12), 6680-6685.
https://corescholar.libraries.wright.edu/physics/139

DOI

10.1063/1.369044