SPICE Model of the Resonant-Tunnelling Diode

Document Type

Article

Publication Date

5-9-1996

Identifier/URL

40274724 (Pure); 0030576259 (QABO)

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Abstract

A SPICE3 model is developed for the resonant-tunnelling diode that combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation for the incoherent, or excess, current at bias voltages beyond the valley. The model is designed for type-I RTDs, such as GaAs/AlGaAs structures, and a fitting procedure is developed to derive the parameters of the model from the experimental current/voltage curve.

DOI

10.1049/el:19960576

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