Self-Aligned GaAs MISFET's with a Low-Temperature-Grown GaAs Gate Insulator
Document Type
Article
Publication Date
5-1-1995
Identifier/URL
40237334 (Pure); 0029306861 (QABO)
Abstract
GaAs MISFET's with a low-temperature-grown (LTG) GaAs gate insulator and ion-implanted self-aligned source and drain n/sup +/ regions are demonstrated. The resistivity and breakdown field of the LTG GaAs insulator were not changed appreciably by implantation and 800/spl deg/C activation annealing. The gate leakage current remained very low at a value of approximately 1 μA per μm2 of gate area at 3 V forward gate bias. Because of the reduced source and drain resistance, the drain saturation current and the transconductance of self-aligned MISFET's increased more than twofold after ion implantation.
Repository Citation
Chen, C. L.,
Mahoney, L. J.,
Nichols, K. B.,
Manfra, M. J.,
Gramstorff, B. F.,
Molvar, K. M.,
Murphy, R. A.,
& Brown, E. R.
(1995). Self-Aligned GaAs MISFET's with a Low-Temperature-Grown GaAs Gate Insulator. IEEE Electron Device Letters, 16 (5), 199-201.
https://corescholar.libraries.wright.edu/physics/1395
DOI
10.1109/55.382239
