Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes
Document Type
Article
Publication Date
11-1-1994
Identifier/URL
40316371 (Pure); 0028549242 (QABO)
Abstract
The origin of low-frequency noise in resonant-tunneling diodes is investigated through spectral and time-domain characterizations over a wide range of temperatures and biasing conditions. The experiments were conducted on devices fabricated on GaAs/Al/sub 0.4/Ga/sub 0.6/As material system. Detailed analyses on the temperature and bias dependences of the random telegraph noise and Lorentzian structures in the noise power spectral densities showed that the low-frequency excess noise arises from hopping conduction of electrons from the emitter to the quasi-bound states in the quantum well. The capture of an electron by a trap in the energy barrier causes fluctuations in the transmission coefficient of the electron due to the modulation of the barrier potential.
Repository Citation
Surya, C.,
Brown, E. R.,
Maki, P. A.,
& Ng, S. H.
(1994). Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes. IEEE Transactions on Electron Devices, 41 (11), 2016-2022.
https://corescholar.libraries.wright.edu/physics/1405
DOI
10.1109/16.333819
