Effect of Lattice-Mismatched Growth on InAs/AlSb Resonant-Tunneling Diodes
Document Type
Article
Publication Date
6-1-1994
Identifier/URL
40299437 (Pure); 0028446866 (QABO)
Abstract
Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by X-ray diffraction measurements, it displayed only a small decrease in peak-to-valley current ratio.
Repository Citation
Brown, E. R.,
Calawa, D. R.,
Turner, G. W.,
Parker, C. D.,
Pantano, J. V.,
& Eglash, S. J.
(1994). Effect of Lattice-Mismatched Growth on InAs/AlSb Resonant-Tunneling Diodes. IEEE Transactions on Electron Devices, 41 (6), 879-882.
https://corescholar.libraries.wright.edu/physics/1407
DOI
10.1109/16.293296
