Strain Splitting of the Gamma(5) and Gamma(6) Free Excitons in ZnO

Authors

D. C. ReynoldsFollow
David C. Look, Wright State University - Main CampusFollow
B. Jogai
C. W. LittonFollow
T. C. CollinsFollow
M T. HarrisFollow
M. J. CallahanFollow
J. S. Bailey

Document Type

Article

Publication Date

11-1-1999

Abstract

High-quality ZnO crystals have been grown by vapor-phase techniques and by the hydrothermal method. Depending on the surface preparation technique, some hydrothermally grown crystals contain strain. These strains result in energy shifts of the free excitons as well as relaxation of the selection rules. The Γ₆ unallowed exciton is observed in these samples without the application of a magnetic field. The Γ₆ exciton is also observed to split in a strain field, consistent with the Γ₉ symmetry for the top valence band in ZnO. The Γ₅ and Γ₆ excitons have been observed to split in the strain field. The splitting is believed due to combined strain and electron–hole spin exchange.

Comments

Copyright © 1999, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 86.10, and may be found at http://jap.aip.org/resource/1/japiau/v86/i10/p5598_s1

Repository Citation

Reynolds, D. C., Look, D. C., Jogai, B., Litton, C. W., Collins, T. C., Harris, M. T., Callahan, M. J., & Bailey, J. S. (1999). Strain Splitting of the Gamma(5) and Gamma(6) Free Excitons in ZnO. Journal of Applied Physics, 86 (10), 5598-5600.
https://corescholar.libraries.wright.edu/physics/141

DOI

10.1063/1.371566