Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure

Authors

Elliott R. Brown, Wright State University - Main CampusFollow
C. D. Parker, Massachusetts Institute of Technology
A. R. Calawa, Massachusetts Institute of Technology
M. J. Manfra, Massachusetts Institute of Technology

Document Type

Article

Publication Date

1-1-1993

Identifier/URL

43037965 (Pure)

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Catalog Record

Abstract

A triple-well resonant-tunneling structure made from the In 0.53Ga0.47As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasibound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.

Repository Citation

Brown, E. R., Parker, C. D., Calawa, A. R., & Manfra, M. J. (1993). Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure. Applied Physics Letters, 62 (23), 3016-3018.
https://corescholar.libraries.wright.edu/physics/1424

DOI

10.1063/1.109175