Growth and Characterization of High Current Density, High-Speed InAs/AlSb Resonant Tunneling Diodes
Document Type
Article
Publication Date
1-1-1991
Identifier/URL
40187051 (Pure); 36449006146 (QABO)
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Abstract
High quality resonant tunneling diodes have been fabricated from the InAs/AlSb material system (InAs quantum well and cladding layers, AlSb barriers) on (100)GaAs substrates. A diode with a 6.4‐nm‐thick InAs quantum well and 1.5‐nm‐thick AlSb barriers yielded a room‐temperature peak current density of 3.7×105 A cm−2 and peak‐to‐valley current ratio of 3.2. This corresponds to an available current density of 2.6×105 A cm−2, which is comparable to that of the best In0.53Ga0.47As/AlAs diodes grown on lattice‐matched substrates and is three times higher than that of the best GaAs/AlAs diode reported to date. These results were obtained in spite of a 7.2% lattice mismatch between the InAs epilayers and the GaAs substrates, which leads to a measured threading dislocation density of roughly 109 cm−2. The experimental peak voltage and current density are in good agreement with theoretical calculations based on a stationary‐state transport model with a two‐band envelope function approximation.
Repository Citation
Söderström, J. R.,
Brown, E. R.,
Parker, C. D.,
Mahoney, L. J.,
Yao, J. Y.,
Andersson, T. G.,
& McGill, T. C.
(1991). Growth and Characterization of High Current Density, High-Speed InAs/AlSb Resonant Tunneling Diodes. Applied Physics Letters, 58 (3), 275-277.
https://corescholar.libraries.wright.edu/physics/1439
DOI
10.1063/1.104659
