High-Speed Resonant-Tunneling Diodes Made From the In0.53 Ga0.47 As/AlAs Material System
Document Type
Article
Publication Date
1-1-1990
Identifier/URL
40261631 (Pure); 0025671719 (QABO)
Abstract
New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1x105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.
Repository Citation
Brown, E. R.,
Parker, C. D.,
Calawa, A. R.,
Manfra, M. J.,
Sollner, T. C.,
Chen, C. L.,
Pang, S. W.,
& Molvar, K. M.
(1990). High-Speed Resonant-Tunneling Diodes Made From the In0.53 Ga0.47 As/AlAs Material System. Proceedings of SPIE - The International Society for Optical Engineering, 1288, 122-135.
https://corescholar.libraries.wright.edu/physics/1443
DOI
10.1117/12.20913
