High-Speed Resonant-Tunneling Diodes
Document Type
Article
Publication Date
8-18-1988
Identifier/URL
40247341 (Pure); 18444403545 (QABO)
Abstract
This paper reviews some of the progress that has occurred recently in both the theory and performance of resonant-tunneling diodes. It begins by describing the present physical understanding of the resonant-tunneling process. Recent experimental advances in resonant-tunneling oscillators are then discussed, including the demonstration of oscillations at frequencies up to 200 GHz. To better understand these results, a detailed analysis is made of the mechanisms that limit the speed of this device. This analysis includes a calculation of the quasibound state lifetime, a determination of the device capacitance from the electrostatic band-bending, and an estimate of the negative differential conductance using two different methods. On this theoretical basis, a device structure is analyzed that could oscillate up to 600 GHz.
Repository Citation
Brown, E. R.,
Sollner, T. C.,
Goodhue, W. D.,
& Chen, C. L.
(1988). High-Speed Resonant-Tunneling Diodes. Proceedings of SPIE - The International Society for Optical Engineering, 943, 2-13.
https://corescholar.libraries.wright.edu/physics/1446
DOI
10.1117/12.947276
