Microwave and Millimeter-Wave Resonant Tunneling Diodes

Document Type

Article

Publication Date

1-1-1987

Identifier/URL

40215219 (Pure); 0023170703 (QABO)

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Abstract

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport [1] it provides. In addition, the negative differential resistance regions which exist in the current-voltage (I–V) curve (peak-to- valley ratios of 3.5:1 at room temperature [2–4] and nearly 10:1 at 77 K have been measured) suggest that high-speed devices based on the peculiarities of the I–V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations [5]. In our laboratory we have been attempting to increase the frequency and power of these oscillators [6], and others have worked toward a better understanding of the equivalent circuit of the device [7] and the underlying processes responsible for the frequency response [8–10]. Three-terminal devices using resonant tunneling in various ways have also been proposed and fabricated [11–13]. In this paper we will describe our most recent results for oscillators as well as some new resonant-tunneling devices that have application in the millimeter and submillimeter-wave spectrum.

DOI

10.1007/978-3-642-72970-6_22

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