Transport Properties of V1-xWxO2 Around the Metal Insulator Transition Temperature
Document Type
Article
Publication Date
1-1-2023
Identifier/URL
40964288 (Pure)
Abstract
The transport properties of W-doped thermochromic V1-xWxO2 (x=0 and 0.0074) thin films prepared by pulsed laser deposition were studied to understand the effect of doping on the electrical properties of these films. Temperature dependent magneto-transport measurements (Hall effect) in magnetic fields up to 9 Tesla were performed on thin film vanadium dioxide (VO2) across the Mott metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at MIT. The Hall mobility varies little across the MIT and remains low at ~ 0.05 cm2 /V sec. The majority carriers are electrons. Magneto-resistance is small and positive. Comparison of the three Hall parameters including carrier concentration, conductivity and mobility between various doping levels on both metallic and insulating state are reported and a model has been proposed. A correlation between carrier concentration and conductivity of VO2 films is observed but doesn’t exist between carrier concentration and mobility.
Repository Citation
Naziripour, G.,
Shin, E.,
Subramanyam, G.,
Dilley, N. R.,
Ramanathan, S.,
Farlow, G.,
Vasilyev, V.,
Claflin, B.,
& Look, D. C.
(2023). Transport Properties of V1-xWxO2 Around the Metal Insulator Transition Temperature. International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 12477, 124770A.
https://corescholar.libraries.wright.edu/physics/1463
DOI
10.1117/12.2647148
