Depth-Resolved Cathodoluminescence and Surface Photovoltage Spectroscopies of Gallium Vacancies in β-Ga2O3 with Neutron Irradiation and Forming Gas Anneals

Document Type

Article

Publication Date

9-1-2021

Identifier/URL

41079988 (Pure)

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Abstract

The gallium vacancy is one of the dominant native point defects in β-Ga2O3, one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga2O3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga2O3.

DOI

10.1116/6.0001240

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