Document Type
Article
Publication Date
12-1-2017
Identifier/URL
41081874 (Pure); 28784987 (PubMed)
Abstract
We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
Repository Citation
Choi, S.,
Rogers, D. J.,
Sandana, E. V.,
Bove, P.,
Teherani, F. H.,
Nenstiel, C.,
Hoffmann, A.,
McClintock, R.,
Razeghi, M.,
Look, D. C.,
Gentle, A.,
Phillips, M. R.,
& Ton-That, C.
(2017). Radiative Recombination of Confined Electrons at the MgZnO/ZnO Heterojunction Interface. Scientific Reports, 7 (1), 7457.
https://corescholar.libraries.wright.edu/physics/1491
DOI
10.1038/s41598-017-07568-z
Comments
This work is licensed under CC BY 4.0
