Near-Infrared (1 to 4 μm) Control of Plasmonic Resonance Wavelength in Ga-Doped ZnO
Document Type
Article
Publication Date
5-1-2017
Identifier/URL
41002876 (Pure)
Abstract
The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy range, E=6.7 to 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is t
Repository Citation
Leedy, K. D.,
Chabak, K. D.,
Vasilyev, V.,
Look, D. C.,
Boeckl, J. J.,
Brown, J. L.,
Tetlak, S. E.,
Green, A. J.,
Moser, N. A.,
Crespo, A.,
Thomson, D. B.,
Fitch, R. C.,
McCandless, J. P.,
& Jessen, G. H.
(2017). Near-Infrared (1 to 4 μm) Control of Plasmonic Resonance Wavelength in Ga-Doped ZnO. Optical Engineering, 56 (5), 170337.
https://corescholar.libraries.wright.edu/physics/1495
DOI
10.1117/1.OE.56.5.057109
