Nondestructive Quantitative Mapping of Impurities and Point Defects in Thin Films: Ga and VZn in ZnO:Ga
Document Type
Article
Publication Date
6-16-2014
Identifier/URL
41005843 (Pure)
Abstract
Ga-doped ZnO (GZO) films grown by pulsed-laser deposition on quartz and other lattice-mismatched substrates can routinely attain resistivities of 2 × 10−4 Ω·cm and thus compete with Sn-doped In2O3 (ITO) in large-area transparent-electrode applications. Nondestructive, high-resolution (1-mm) maps of thickness d, concentration n, and mobility μ on such films can be obtained automatically from commercial spectroscopic ellipsometers. From n and μ, degenerate-electron scattering theory yields donor ND and acceptor NA concentrations at each point. Finally, ND and NA can be identified as [Ga] and [VZn], respectively, demonstrating high-density mapping of impurities and point defects in a semiconductor thin film.
Repository Citation
Vasilyev, V.,
Cetnar, J.,
Claflin, B.,
Grzybowski, G.,
Leedy, K.,
Limberopoulos, N.,
Look, D. C.,
& Tetlak, S.
(2014). Nondestructive Quantitative Mapping of Impurities and Point Defects in Thin Films: Ga and VZn in ZnO:Ga. Applied Physics Letters, 104 (24), 242107.
https://corescholar.libraries.wright.edu/physics/1512
DOI
10.1063/1.4884347
