Photoluminescence of M-Plane GaN Grown on M-Plane Sapphire by MOCVD
Document Type
Article
Publication Date
4-1-2014
Identifier/URL
41001999 (Pure)
Abstract
The photoluminescence of m-plane GaN grown on m-plane sapphire substrate by MOCVD is reported. The defect related emissions with temperature and excitation power dependence are detailed. In addition to the near band-edge emission (at ∼3.472 eV), two major defect-related bands (D1∼3.43 eV and D2∼3.34 eV) are dominant in the low temperature spectra. The D1 emission exhibits thermal quenching with two activation energies (8 and 30 meV), similar to that of a-plane GaN grown on r-plane sapphire. The D2 band was found to consist of a complex overlap of multiple emissions. By fitting the asymmetric band using multiple Gaussian functions, the extracted emission at ∼3.34 eV was shown to have thermal activation energy ∼17–20 meV. This emission exhibits different behavior from that of D2 in a-plane GaN in temperature and excitation power dependency, indicating the possible involvement of different defects due to the changes in growth characteristics.
Repository Citation
Teherani, F. H.,
Look, D. C.,
& Rogers, D. J.
(2014). Photoluminescence of M-Plane GaN Grown on M-Plane Sapphire by MOCVD. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (3-4), 778-781.
https://corescholar.libraries.wright.edu/physics/1515
DOI
10.1002/pssc.201300328
